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| for high-speed switching applications connected in series marking: kjg maximum ratings @t a =25 parameter symbol limits unit reverse voltage v r 75 v forward current i o 150 ma forward power dissipation p d 200 mw junction temperature t j 150 storage temperature t stg -65~150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min max unit reverse breakdown voltage v (br) r i r = 100a 75 v reverse voltage leakage current i r v r =75v v r =20v 2.5 25 a na forward voltage v f i f =1ma i f =10ma i f =50ma i f =150ma 715 855 1000 1250 mv diode capacitance c d v r =0v f=1mhz 2 pf reveres recovery time t rr i f =i r =10ma i rr =0.1i r r l =100 ? 4 ns BAV99W switching diode features ? ? dimensions in inches and (millimeters) sot-323 http://www.luguang.cn mail:lge@luguang.cn
typical characteristics BAV99W switching diode http://www.luguang.cn mail:lge@luguang.cn BAV99W switching diode http://www.luguang.cn mail:lge@luguang.cn |
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